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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1908 DESCRIPTION With TO-3PML package Complement to type 2SC5100 APPLICATIONS Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Fig.1 simplified outline (TO-3PML) and symbol Base Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Collector-emitter voltage INCH Base current Emitter-base voltage Collector current ANG EMIC ES Open base Open collector TC=25ae OND TOR UC VALUE -120 -120 -6 -8 -3 75 150 -55~150 ae ae UNIT V V V A A W Collector power dissipation Junction temperature Storage temperature 1 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-3 A;IB=-0.3 A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 50 20 300 MIN -120 2SA1908 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -0.5 -10 -10 180 |I |I V A A MHz pF Switching times ton ts tf Turn-on time Storage time Fall time hFE classifications O 50-100 P HAN INC Y 70-140 90-180 SEM GE IC=-4A;RL=10| IB1=-IB2=-0.4A VCC=-40V OND IC TOR UC 0.14 1.40 |I 0.21 |I s s |I s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1908 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1908 SEM GE HAN INC OND IC TOR UC 4 |
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